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Lithography method and system with correction of overlay offset errors caused by wafer processing

机译:校正由晶片处理引起的覆盖偏移误差的光刻方法和系统

摘要

A method of controlling lithographic overlay offsets in the manufacture of semiconductor devices from wafers, comprising the steps of forming a lithographic pattern on a wafer layer with a lithographic tool, processing the wafer after the pattern is formed to enable fabrication of a semiconductor device, predicting overlay offset corrections based on one or more factors involved in the processing of the wafer, and utilizing the predicted overlay offset corrections to positionally control the lithographic tool.
机译:一种在从晶片制造半导体器件的过程中控制光刻重叠偏移的方法,该方法包括以下步骤:利用光刻工具在晶片层上形成光刻图案,在形成图案之后处理晶片以使得能够制造半导体器件,预测基于晶片处理中涉及的一个或多个因素的叠层偏移校正,并利用预测的叠层偏移校正来位置控制光刻工具。

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