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GaN system semiconductor light emitting device excellent in light emission efficiency and light extracting efficiency
GaN system semiconductor light emitting device excellent in light emission efficiency and light extracting efficiency
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机译:发光效率和出光效率优异的GaN系半导体发光元件
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摘要
Although there is provided a high light transmittance of an emitted light by a ITO electrode film conventionally employed, there occurs a formation of a Schottky type contact between the ITO electrode film and a p type GaN system semiconductor layer, thus resulting in a not uniform flow of an electric current. It is an object of the present invention to provide a semiconductor light emitting device constituted by forming a transparent electrode, which facilitates acquiring an ohmic property, to be replaced by an ITO electrode film, at the light extracting or light exit side of the GaN system semiconductor light emitting device, so as to improve a light emission efficiency and a radiation extracting efficiency or a light exit efficiency of a GaN system semiconductor light emitting device. In order to accomplish the above mentioned object, the present invention provides a semiconductor light emitting device comprising a light emission layer, consisting of a GaN system semiconductor, which is interposed between an n type GaN system semiconductor layer and a p type GaN system semiconductor layer, wherein there is provided a Ga-doped MgzZn1-zO (0≦1) electrode film.
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机译:尽管通过常规使用的ITO电极膜提供了高的发射光透射率,但是在ITO电极膜和p型GaN系统半导体层之间形成了肖特基型接触,因此导致不均匀的流动。电流。本发明的目的是提供一种半导体发光器件,该半导体发光器件通过在GaN系统的光提取侧或光出射侧形成易于获得欧姆特性的透明电极来代替ITO电极膜,从而获得欧姆特性。半导体发光器件,以提高GaN系统半导体发光器件的发光效率和辐射提取效率或出光效率。为了实现上述目的,本发明提供一种半导体发光器件,该半导体发光器件包括发光层,该发光层由GaN系统半导体构成,该发光层插入在n型GaN系统半导体层和p型GaN系统半导体层之间,其中提供了Ga掺杂的Mg z Sub> Zn 1-z Sub> O(0≤<1)电极膜。
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