NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE CAPABLE OF MAXIMIZING LIGHT EMITTING EFFICIENCY BY INCREASING LIGHT EXTRACTING EFFICIENCY

摘要

PURPOSE: A nitride semiconductor light emitting device is provided to minimize the amount of generated heat to prevent the lifetime thereof from becoming shortened due to deterioration, thereby extending the lifetime of a light emitting device.;CONSTITUTION: A substrate(10) has an uneven structure(11). An n-type nitride semiconductor layer(20) is formed on the substrate. An active layer(30) is formed on the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(40) is formed on the active layer. The p/n-type nitride semiconductor layers are electrically connected to the p/n-type nitride semiconductor layers respectively.;COPYRIGHT KIPO 2011