Polarization modulation photoreflectance characterization of semiconductor electronic interfaces

摘要

A polarization modulation photoreflectance technique has been developed for optical characterization of semiconductor electronic interfaces. By using a laser source in conjunction with polarization state modulation, a polarization modulation spectroscopy technique may be used to characterize the optical response of semiconductor materials and structures. Disclosed methods and instruments are suitable for characterization of optical signatures of electronic interfaces, including characterization of electric fields at semiconductor interfaces.