首页> 外国专利> Avoiding excessive cross-terminal voltages of low voltage transistors due to undesirable supply-sequencing in environments with higher supply voltages

Avoiding excessive cross-terminal voltages of low voltage transistors due to undesirable supply-sequencing in environments with higher supply voltages

机译:避免在电源电压较高的环境中由于不良的电源排序而导致低压晶体管的交叉端子电压过高

摘要

Ensuring sufficient bias current is provided to a portion of a circuit containing low voltage transistors operating with a high supply voltage. Such a sufficient bias current may be ensured by generating a primary bias current from a low supply voltage and a backup bias current from a high supply voltage, and providing the backup bias current as the bias current if the primary bias current is not present. The primary bias current may be provided as the bias current when the low supply voltage is available. Thus, the backup bias current is provided as bias current in case of undesirable supply sequencing.
机译:确保向包含以高电源电压工作的低压晶体管的电路的一部分提供足够的偏置电流。通过从低电源电压生成初级偏置电流并从高电源电压生成备用偏置电流,并在不存在初级偏置电流的情况下提供备用偏置电流作为偏置电流,可以确保这样的充足偏置电流。当低电源电压可用时,可以将初级偏置电流提供为偏置电流。因此,在不期望的电源排序的情况下,提供备用偏置电流作为偏置电流。

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