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Memory cell with plasma-grown oxide spacer for reduced DIBL and Vss resistance and increased reliability
Memory cell with plasma-grown oxide spacer for reduced DIBL and Vss resistance and increased reliability
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机译:具有等离子生长氧化物隔离层的存储单元,可降低DIBL和Vss电阻并提高可靠性
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摘要
According to one exemplary embodiment, a method for fabricating a floating gate memory cell on a substrate comprises a step of forming a first spacer adjacent to a source sidewall of a stacked gate structure, where the stacked gate structure is situated over a channel region in the substrate. The method further comprises forming a high energy implant doped region adjacent to the first spacer in a source region of the substrate. The method further comprises forming a recess in the source region, where a sidewall of the recess is situated adjacent to a source of the floating gate memory cell, and where forming the recess comprises removing the first spacer. The method further comprises forming a second spacer adjacent to the source sidewall of the stacked gate structure, where the second spacer extends to a bottom of the recess, and where the second spacer comprises plasma-grown oxide.
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