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Nonvolatile memory using a two-step cell verification process
Nonvolatile memory using a two-step cell verification process
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机译:使用两步单元验证过程的非易失性存储器
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摘要
A nonvolatile memory comprises a plurality of memory cells, a bit line control circuit and a verifying circuit. The bit line control circuit includes a driving circuit and a non-driving circuit. The verifying circuit verifies a first threshold voltage of the memory cell when the driving circuit drives the memory cell. The verifying circuit also verifies a second threshold voltage when the driving circuit does not drive the memory cell.
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