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Method for comparing the address of a memory access with an already known address of a faulty memory cell
Method for comparing the address of a memory access with an already known address of a faulty memory cell
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机译:用于将存储器访问的地址与故障存储器单元的已知地址进行比较的方法
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摘要
A comparison method compares the address of a memory cell with a known address of a faulty memory cell in a semiconductor memory module. The module is subdivided into banks and has an address structure in which each address is associated with a bank that is organized in rows and columns and is defined by a row address, a column address and a bank address. Not only the row address is determined, but also the column address and the bank address when a memory access occurs. A bank is activated with a bank selection signal, and the access to a valid address of a faulty memory cell is indicated by an enable register.
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