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Display device having a pixel electrode through a second interlayer contact hole in a wider first contact hole formed over an active region of display switch
Display device having a pixel electrode through a second interlayer contact hole in a wider first contact hole formed over an active region of display switch
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机译:具有通过形成在显示开关的有源区域上方的较宽的第一接触孔中的第二层间接触孔的像素电极的显示装置
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摘要
There is provided a combination of doping process and use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral circuit of the same conductivity type as that of the thin film transistor of the active matrix circuit to include both of N-type and P-type impurities. Also, a thin film transistor in an active matrix circuit has offset regions by using side walls, and another thin film transistor in a peripheral circuit has a lightly doped region by using side walls.
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