Method of fabricating semiconductor device having gate insulating film comprising a silicate nitride film with interface insulating film

摘要

According to the present invention, there is provided a semiconductor device comprising:;an interface insulating film selectively formed on a predetermined region of a semiconductor substrate, and having a film thickness of substantially one atomic layer;;a gate insulating film formed on said interface insulating film, and having a dielectric constant higher than that of said interface insulating film;;a gate electrode formed on said gate insulating film; and;source and drain regions formed in a surface region of said semiconductor substrate on two sides of a channel region positioned below said gate electrode.