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ULTRA-THIN NUCLEATION LAYER FOR MAGNETIC THIN FILM MEDIA AND THE METHOD FOR MANUFACTURING THE SAME.

机译:磁性薄膜介质的超薄成核层及其制造方法。

摘要

IN THIS INVENTION, AN ULTRA THIN LAYER OF COCR ALLOY NUCLEATION LAYER (13) IS SPUTTERED AT AN EXTREMELY LOW DEPOSITION RATE ABOVE A PREDOMINANTLY (200) ORIENTED CR FILM (12) FOLLOWED BY A COCRPT BASED ALLOY SPUTTERED FILM (14) AT HIGHER RATES AND MODERATE TEMPERATURES. THIS STRUCTURE CREATES A MEDIA WHICH HAS VERY HIGH HC, AND EXCELLENT PW5O, LOW NOISE AND EXCELLENT LOW TNLD VALUES. BY USING THIS TECHNIQUE, THE COCRPT MAGNETIC FILM (14) ACHIEVES EXCELLENT IN-PLANE CRYSTALLOGRAPHIC ORIENTATION, AND HIGH HC IS ACHIEVED WITH MINIMAL AMOUNT OF PT ADDITION TO THE MAGNETIC FILM. THE METHOD ALLOWS VERY FINE GRAIN STRUCTURE OF COBALT TO BE FORMED WHICH CONTRIBUTES TO GOOD SIGNAL TO NOISE RATIO. A FINE GRAIN STRUCTURE COMBINED WITH CHROMIUM SEGREGATION BETWEEN THE GRAINS IMPROVE THE SIGNAL TO NOISE RATIO EVEN MORE. A HIGH DEGREE OF IN-PLANE C-AXIS ORIENTATION IS ACHIEVED IN THE COBALT LAYER WHICH PROVIDES VERY HIGH HYSTERESIS IOOP SQUARENESS WHICH HELPS TO IMPROVE THE OW AND TNLD. THE PERFECTION OF THE GRAINS IS VERY HIGH SO THAT HIGH ANISOTROPY IS OBTAINED IN THE MAGNETIC LAYER, RESULTING IN HIGH HC WITHOUT THE NECESSITY OF ADDITION OF HIGH LEVEL OF PT. THE HIGH DEGREE OF CRYSTALLINE PERFECTION ALSO CONTRIBUTES TO LOW TNLD. (FIG. 4)
机译:在本发明中,以极低的沉积速率溅射了一层超薄的可乐合金成核层(13),其厚度高于(200)取向的CR膜(12),接着是一层基于CRCRPT的合金溅射膜(14)。和适中的温度。该结构创建了一种具有高HC,出色的PW5O,低噪音和出色的低TNLD值的媒体。通过使用该技术,可可脂磁性薄膜(14)可以实现出色的面内晶体学定位,并且在磁性薄膜上添加了最少的PT即可实现高HC。该方法可以使钴的精细晶粒结构得以成型,从而有助于改善噪声比。细粒结构与谷物之间的铬偏析相结合,可进一步改善信号的噪声比。在钴层中实现了高度的平面C轴定向,钴层提供了非常高的滞回性IOOP平方根,有助于改善OW和TNLD。晶粒的渗透非常高,因此在磁性层中具有高各向异性,导致高HC,而无需增加PT的高水平。高度的结晶渗透也有助于降低TNLD。 (图4)

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