MODULATION OF STRESS IN STRESS FILM THROUGH ION IMPLANTATION AND ITS APPLICATION IN STRESS MEMORIZATION TECHNIQUE

摘要

MODULATION OF STRESS IN STRESS FILM THROUGH ION IMPLANTATION AND ITS APPLICATION IN STRESS MEMORIZATION TECHNIQUEAbstract Some example embodiments of the invention provide a method to improve the performance of MOS devices by increasing the stress in the channel region. An example embodiment for a NMOS transistor is to form a tensile stress layer over a NMOS transistor. A heavy ion implantation is performed into the stress layer and then an anneal is performed. This increases the amount of stress from the stress layer that the gate retains/memorizes thereby increasing device performance.Figure 4