SEMICONDUCTOR DEVICE INCLUDING A STRAINED SUPERLATTICE AND OVERLYING STRESS LAYER AND RELATED METHODS

摘要

A semiconductor device may include a strained superlattice layer (325)including a plurality of stacked groups of layers, and a stress layer abovethe strained superlattice layer. Each group of layers of the strainedsuperlattice layer may include a plurality of stacked base semiconductormonolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent basesemiconductor portions.