首页>
外国专利>
SUBSTRATE, IN PARTICULAR MADE OF SILICON CARBIDE, COATED WITH A THIN STOICHIOMETRIC FILM OF SILICON NITRIDE, FOR MAKING ELECTRONIC COMPONENTS, AND METHOD FOR OBTAINING SUCH A FILM
SUBSTRATE, IN PARTICULAR MADE OF SILICON CARBIDE, COATED WITH A THIN STOICHIOMETRIC FILM OF SILICON NITRIDE, FOR MAKING ELECTRONIC COMPONENTS, AND METHOD FOR OBTAINING SUCH A FILM
展开▼
机译:用碳化硅的薄化学计量膜涂覆的,尤其是碳化硅制成的基质,用于制造电子成分,以及获得这种膜的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The invention concerns a substrate, in particular made of silicon carbide, coated with a thin stoichiometric film of silicon nitride, for making electronic components, and a method for obtaining such a film. The method for obtaining the film on the substrate (1) in the presence of at least one nitrogen-containing gas, consists in coating a layer (2) of a material permeable to said gas and causing the silicon nitride film to be formed at the interface between the substrate and the material layer. The invention is applicable in particular in microelectronics.
展开▼