An inductor or low loss interconnect in an integrated circuit

摘要

An integrated circuit with a buried layer (e.g., 105) for increasing the Q of an inductor formed in the integrated circuit. The substrate includes a highly doped buried layer (e.g., 105) formed between less doped layers. This provides a high Q inductor while preserving device and latchup characteristics. The inductor may also include an increased thickness conductive layer (e.g., 130) in the inductor to further increase Q. The present invention is also directed to a low loss interconnect.