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SYSTEM, MASKS, AND METHODS FOR PHOTOMASKS OPTIMIZED WITH APPROXIMATE AND ACCURATE MERIT FUNCTIONS
SYSTEM, MASKS, AND METHODS FOR PHOTOMASKS OPTIMIZED WITH APPROXIMATE AND ACCURATE MERIT FUNCTIONS
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机译:用近似和精确的优值函数优化的照片集的系统,掩码和方法
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摘要
Photomask patterns are represented using contours defined by mask functions. Given target pattern (901), contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization (904, 906, 908, 909) utilizes " merit function" (907) for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturabiliry of photomasks.
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