STRUCTURES AND DESIGNS FOR IMPROVED EFFICIENCY AND REDUCED STRAIN III-NITRIDE HETEROSTRUCTURE SEMICONDUCTOR DEVICES

摘要

The present invention provides semiconductor structures, and methods for making semiconductor structures, comprising an InA1N and/or InA1GaN strain relief layer that have a lattice constant larger than that of a substrate film upon which it is grown such that it allows the growth of strain-free or low-strain semiconductor devices.