III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, CAPABLE OF IMPROVING LIGHT EXTRACTION EFFICIENCY BY FORMING A PROTRUSION ON THE SURFACE OF A TRANSMITTANCE ELECTRODE

摘要

PURPOSE: A III-nitride semiconductor light emitting device is provided to increase light extraction efficiency by making the side of the transmittance electrode inclined.;CONSTITUTION: In a III-nitride semiconductor light emitting device, a buffer(20) is formed on a substrate(10). An n-type nitride semiconductor layer(30) is formed on the buffer. An active layer(40) is formed on the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(50) is formed on the active layer. A transmittance electrode(60) including a top side and a bottom side is formed on a p-type nitride semiconductor layer.;COPYRIGHT KIPO 2011