FLIP-CHIP GAN-BASED LIGHT EMITTING DIODE AND MANUFACTURING METHOD OF THE SAME

摘要

A flip-chip nitride LED is provided to discharge the light generated from an active layer even if the light is incident upon a sapphire substrate at an angle greater than a critical angle by forming a concave groove on the sapphire substrate. A nitride semiconductor layer including a buffer layer(11), a first conductive layer(12), an active layer(13) and a second conductive layer(14) is disposed on a sapphire substrate(10). A first electrode is formed on the first conductive layer. A second electrode is formed on the second conductive layer. A concave groove is formed on the surface of the sapphire substrate. The nitride semiconductor layer grown on the sapphire substrate is Inx(GayAl1-y)N wherein 1 x 0,1 y 0, and x+y0.