Image sensors having a passivation layer exposing an entire surface of at least a main pixel array region and methods of fabricating the same

摘要

At least the front passivation image sensor and its manufacturing method having a film to expose a region of the main pixel array are provided. Wherein the image sensors are provided with an integrated circuit substrate having a peripheral circuit region surrounding the main pixel array region and the main pixel array region. A plurality of main pixels are provided on the integrated circuit substrate in the main pixel array region. Each of the main pixel is provided with a main photodiode and a transfer transistor connected in series thereto. The interlayer insulating film having a flat upper surface on the substrate having the plurality of main pixels is provided. The upper passivation film pattern on the interlayer insulation film is arranged. The upper passivation layer pattern to expose the whole of the interlayer insulation film in the main pixel array region covering the interlayer insulation film in the peripheral circuit region. ; Image sensor, passivation, active pixel sensor