GATE INSULATING LAYER, ORGANIC THIN FILM TRANSISTOR COMPRISING THE SAME, AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS COMPRISING THE ORGANIC THIN FILM TRANSISTOR

摘要

A method for manufacturing a substance for a gate dielectric, an organic thin film transistor having the gate dielectric manufactured by the same, and an organic light emitting display apparatus having the organic thin film transistor are provided to improve switching characteristics by using the gate dielectric including a carbon nano tube and a binder. Source drain electrodes(123) are formed on a substrate(100). An organic semiconductor layer(127) is contacted to the source and the drain electrodes. A gate electrode(121) is insulated from the source and the drain electrode and the organic semiconductor layer. A gate dielectric(105) insulates the gate electrode from the source and the drain electrodes and the organic semiconductor layer. The gate dielectric includes a carbon nano tube(105a) and a binder(105b). The carbon nano tube is uniformly distributed on the gate dielectric.