首页> 外国专利> SP3 BONDING BORON NITRIDE THIN FILM HAVING SELF-FORMING SURFACE SHAPE BEING ADVANTAGEOUS IN EXHIBITING PROPERTY OF EMITTING ELECTRIC FIELD ELECTRONS, METHOD FOR PREPARATION THEREOF AND USE THEREOF

SP3 BONDING BORON NITRIDE THIN FILM HAVING SELF-FORMING SURFACE SHAPE BEING ADVANTAGEOUS IN EXHIBITING PROPERTY OF EMITTING ELECTRIC FIELD ELECTRONS, METHOD FOR PREPARATION THEREOF AND USE THEREOF

机译:SP3粘结的氮化硼薄膜,具有自形成的表面形状,具有良好的发射电场电子性能,其制备方法和用途

摘要

A method for preparing an sp3 bonding boron nitride film exhibits excellent electric field electron emission characteristics which comprises introducing a reaction gas containing a boron source and a nitrogen source into a reaction vessel, adjusting the temperature of a substrate to the range of room temperature to 1300‹C, and irradiating the substrate with an ultraviolet light with or without the generation of a plasma, to thereby form a surface structure excellent in electric field electron emission characteristics on the substrate by a reaction from the vapor phase in a self-forming manner. The film prepared by the above method is a material which, in addition to the above characteristics, has high resistance to electric field strength, can emit electrons with a great current density, and is free from the deterioration thereof. ® KIPO & WIPO 2007
机译:一种sp3键合氮化硼膜的制备方法,该方法显示出优异的电场电子发射特性,该方法包括将含有硼源和氮源的反应气体引入反应容器中,将基板温度调节至室温至1300℃。并在不产生等离子体的情况下用紫外线照射基板,从而通过自反应与气相反应,在基板上形成电场电子发射特性优异的表面结构。通过上述方法制备的膜是除了具有上述特性之外,还具有高的耐电场强度,可以发射具有大电流密度的电子并且没有其劣化的材料。 ®KIPO和WIPO 2007

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