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NITRIDE HETEROJUNCTION TRANSISTORS HAVING CHARGE-TRANSFER INDUCED ENERGY BARRIERS AND METHODS OF FABRICATING THE SAME
NITRIDE HETEROJUNCTION TRANSISTORS HAVING CHARGE-TRANSFER INDUCED ENERGY BARRIERS AND METHODS OF FABRICATING THE SAME
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机译:具有电荷转移诱导的能量壁垒的氮化物异质结晶体管及其制造方法
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摘要
A nitride-based field effect transistor includes a substrate, a channel layer comprising InAlGaN formed on the substrate, source and drain ohmic contacts in electrical communication with the channel layer, and a gate contact formed on the channel layer. At least one energy barrier opposes movement of carriers away from the channel layer. The energy barrier may comprise an electron source layer in proximity with a hole source layer which generate an associated electric field directed away from the channel. An energy barrier according to some embodiments may provide a built-in potential barrier in excess of about 0.5 eV. Method embodiments are also disclosed. ® KIPO & WIPO 2007
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