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TEST PATTERN FOR MEASURING THE CONTACT RESISTANCE OF METAL INTERCONNECTION

机译:金属互连接触电阻的测试图

摘要

A test pattern for measuring contact resistance of a metal line is provided to acquire exact contact resistance by forming a line pitch of a test metal line layer same as that of a real metal line layer. A test pattern is used for measuring a contact resistance of a metal line structure, wherein the metal line structure is composed of a first metal line layer of a first level, a second metal line layer of a second level, and a via contact for connecting the first and second metal line layers with each other. The test pattern is composed of a first test metal line layer(310) corresponding to the first metal line layer and a second test metal line layer(320) corresponding to the second metal line layer, The first and second test metal line layers have the same line pitches as those of the first and second metal line layers.
机译:提供用于测量金属线的接触电阻的测试图案,以通过形成与真实金属线层相同的测试金属线层的线间距来获得精确的接触电阻。测试图案用于测量金属线结构的接触电阻,其中金属线结构由第一层的第一金属线层,第二层的第二金属线层和用于连接的通孔触点组成第一和第二金属线层相互之间。测试图案由对应于第一金属线层的第一测试金属线层(310)和对应于第二金属线层的第二测试金属线层(320)组成。第一和第二测试金属线层具有与第一和第二金属线层的线间距相同。

著录项

  • 公开/公告号KR20070005321A

    专利类型

  • 公开/公告日2007-01-10

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20050060597

  • 发明设计人 RHO IL CHEOL;KIM CHOON HWAN;

    申请日2005-07-06

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-21 20:37:54

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