REMOVING METHOD OF CONTAMINATION PARTICLES IN CD-SEM CHAMBER AND OBSERVATION METHOD OF PATTERN SHAPE OF SEMICONDUCTOR WAFER USING CD-SEM

摘要

A removing method of contamination particles in a CD(Critical Dimension)-SEM(Scanning Electron Microscope) chamber and an observation method of a pattern shape of a semiconductor wafer using CD-SEM are provided to remove hydrocarbon from the CD-SEM chamber by using a plasma cleaning process under an O3 gas condition. A plasma cleaning process is performed in a CD-SEM chamber by using O3 gas as source gas. At this time, hydrocarbon is removed from an inner wall of the CD-SEM chamber. Then, a wafer with an ArF photoresist layer is loaded into the CD-SEM chamber. The plasma of the plasma cleaning process is activated under a predetermined RF(Radio Frequency) power condition of 13.56 MHz.