首页> 外国专利> APPARATUS FOR REMOVING PARTICLES ON FACE OF SEMICONDUCTOR WAFER AND METHOD OF REMOVING PARTICLES ON FACE OF SEMICONDUCTOR WAFER USING THE SAME

APPARATUS FOR REMOVING PARTICLES ON FACE OF SEMICONDUCTOR WAFER AND METHOD OF REMOVING PARTICLES ON FACE OF SEMICONDUCTOR WAFER USING THE SAME

机译:用于去除半导体晶片的表面上的颗粒的装置以及使用该方法去除半导体晶片的表面上的颗粒的方法

摘要

PURPOSE: To provide a removal apparatus for removing particles on the face of a semiconductor wafer, by evacuation can be achieved completely without reattachment of removed particles and to provide a method of removing the particles on the face of the wafer, which uses it. ;CONSTITUTION: In an apparatus for removing particles on the face of a semiconductor wafer 1, a gas discharge means in which all tips of nozzles 3 are bent to the same direction, by which an inert gas is discharged, at an angle, to the face of the semiconductor wafer 1 to be set and in which all the nozzles 3 are housed inside the setting region of the semiconductor wafer 1 and an exhausting trap 5 which generates the laminar flow of a side flow on the semiconductor wafer 1 and in which an intake port 5a is arranged so as to correspond to the direction of the laminar flow are installed.;COPYRIGHT: (C)1996,JPO
机译:用途:提供一种用于去除半导体晶片表面上的颗粒的去除设备,通过抽空可以完全实现而无需重新附着去除的颗粒,并提供一种使用该方法去除晶片表面上的颗粒的方法。 ;组成:在用于去除半导体晶片1上的颗粒的装置中,气体排放装置是指喷嘴3的所有尖端都向同一方向弯曲,从而将惰性气体以一定角度排放到气体排放装置中。半导体晶片1的要设置的表面,其中所有喷嘴3都容纳在半导体晶片1的设置区域内,以及排放阱5,该排放阱5在半导体晶片1上产生侧流的层流,并且其中进气口5a的设置应使其与层流的方向相对应。版权所有:(C)1996,JPO

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号