FABRICATION METHOD OF SELF ASSEMBLED NANO STRUCTURE WITH E-BEAM LITHOGRAPHY

摘要

A method for fabricating a self-assembled nano structure using electron beam lithography is provided to reduce complexity of a process by applying a secondary electron scattering to a self assembling of quantum dots. A self-assembled nano structure is formed on an SOI(Silicon On Insulator) substrate(1). A BOX(Buried Oxide Layer)(2) is formed between an upper silicon layer and a lower silicon layer. A source(4) and a drain(5) are arranged on the upper silicon layer. Magnetic quantum dots are positioned near a center between the source and the drain. An interlayer dielectric having a predetermined thickness is laminated and then a control gate(14) is formed to complete the self-assembled nano structure using a secondary electron scattering.