METHOD OF CLEANING SUBSTRATE HAVING EXPOSED SURFACES OF SILICON AND SILICON GERMANIUM AND METHOD OF FORMING SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NHSUB4/SUBOH), hydrogen peroxide (HSUB2/SUBOSUB2/SUB), and deionized water (HSUB2/SUBO), and the second cleaning solution comprises at least 200 times more deionized water (HSUB2/SUBO) than ammonium hydroxide (NHSUB4/SUBOH) by volume.