IMPROVING ADHESION AND MINIMIZING OXIDATION ON ELECTROLESS CO ALLOY FILMS FOR INTEGRATION WITH LOW K INTER-METAL DIELECTRIC AND ETCH STEO

摘要

A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.