The present invention relates to a substrate, a FET-based biosensor formed on both sides of the substrate and in contact with said each doped to the substrate and the opposite polarity to the source and drain, the source and drain, and a gate formed on the substrate, the gate It provides a FET-based biosensor characterized in that the biomolecules bound to the surface as possible inorganic film is provided. The present invention also provides a method for detecting biomolecules using a FET-based biosensor and the manufacturing method of the FET-based biosensor. FET-based biosensor having an inorganic film according to the present invention can be manufactured only by a semiconductor manufacturing process without any additional processing, so it is possible to patterning. Therefore, one FET selectively deposited only on an inorganic film or the gate in the surface can be selectively deposited only on a part of the inorganic film surface in a plurality of gate FET. Further, according to the present invention can be detected effectively even a trace amount of a target biomolecule, wherein the inorganic film thickness can be adjusted very thin can be a biomolecule binding in the detectable distance of the debye length FET. ; FET, biosensors, anodized in an inorganic film, gate, security (boehmite)
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