RAPID THERMAL REMOTE PLASMA NITRIDATION FACILITY USING THE HYDROGEN ABSORPTION EQUIPMENT

摘要

A rapid thermal remote plasma apparatus for forming a nitride layer using a hydrogen absorption part is provided to effectively solve problems caused by a decrease of the characteristic of gate insulation layers in performing a nitride layer formation process using NH3 by using a hydrogen absorption apparatus. A reaction gas is supplied by a gas supply line(60). A remote plasma generating part(50) activates the reaction gas supplied through the gas supply line to form remote plasma. The hydrogen radical ions among the radical ions generated from the remote plasma generating part are prevented passing through by a hydrogen absorption part(40). A nitride layer is formed by a rapid thermal process part(10) by using the nitrogen radical ions having passed through the hydrogen absorption part. The hydrogen absorption part can be disposed between the remote plasma generating part and the rapid thermal process part.