METHOD FOR MANUFACTURING USING PLASMA DOPING AND BEAMLINE IMPLANTATION

摘要

A method for fabricating a semiconductor device using plasma doping and beam line implantation is provided to obtain uniform doping and inner diffusion by using plasma doping and beam line implantation together in a boron ion implantation process. A gate oxide layer(12) is formed on a semiconductor substrate(11). The surface of the gate oxide layer is nitridized by a furnace nitridization, rapid annealing nitridization or plasma nitridization. A polysilicon layer is formed on the nitridized polysilicon layer. P-type impurities are implanted into the polysilicon layer by an ion implantation process in which plasma doping and beam line implantation are mixed so as to form a P-type polysilicon gate. An annealing process is performed to activate the P-type impurities. In the process for forming the P-type polysilicon gate, the beam line implantation process can be performed after the plasma doping process is carried out.