FABRICATION METHOD OF SEMICONDUCTOR DEVICE HAVING STORAGE CAPACITOR AND HIGH VOLTAGE RESISTANCE CAPACITOR AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME

摘要

A method for fabricating a semiconductor device having a storage capacitor and a high voltage resistance capacitor is provided to fabricate different kinds of capacitors in a semiconductor device by forming capacitors satisfying different electrical requirements in the same layer without greatly increasing the number of process steps. A substrate(100) is prepared in which a storage capacitor region and a high voltage resistance capacitor region are included. A lower electrode layer is formed on the capacitor regions. A first dielectric layer(121) is formed on the lower electrode layer. The first dielectric layer in the storage capacitor region is selectively removed to expose the lower electrode layer in the storage capacitor region. A second dielectric layer(123) is formed on the lower electrode layer and the first dielectric layer in the exposed storage capacitor region. The first and second dielectric layers can be made of the same material layer like a SiO2 layer. An upper electrode layer is formed on the second dielectric layer. A third dielectric layer(125) is formed on the second dielectric layer.