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METHOD OF FORMING AN ISOLATION LAYER OF THE FIN TYPE FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE FIN TYPE FIELD EFFECT TRANSISTOR USING THE SAME
METHOD OF FORMING AN ISOLATION LAYER OF THE FIN TYPE FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE FIN TYPE FIELD EFFECT TRANSISTOR USING THE SAME
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机译:鳍型场效应晶体管的隔离层的形成方法以及使用该场效应晶体管制造鳍型场效应晶体管的方法
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摘要
A method for fabricating an isolation layer of a fin-type FET is provided to remarkably decrease the number of process for fabricating a fin-type FET by forming isolation layers having different steps in the peripheral and cell regions of a substrate by a minimized process. A substrate(100) divided into a cell region and a peripheral region that are exposed to an opening of a hard mask pattern is etched to form a trench so that a silicon fin(110) is defined by the trench to be guaranteed as the channel region of the fin-type transistor. A liner layer(112) having substantially the same thickness is formed on the bottom and the top surfaces of the trench and on the surface of the hard mask pattern. A planarized insulation layer is formed to fill the trench having the liner layer. A photoresist pattern is formed to cover the insulation layer in the peripheral region. A part of the insulation layer in the cell region is firstly wet-etched to form an insulation layer pattern. The photoresist pattern is removed. While the liner layer and the hard mask pattern are removed by a second wet-etch process, the insulation layer in the cell region and a part of the upper part of the insulation layer pattern in the cell region are etched to form isolation layers(120a,120b) having different heights in the peripheral and cell regions.
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