METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE CAPABLE OF PREVENTING PATTERN COLLAPSE

摘要

The present invention, while effectively removing the ion implantation mask the photoresist pattern during the formation of scum, securing process margins can be conceived to provide a method of manufacturing a semiconductor device which, for this purpose the present invention comprises the steps of forming a conductive pattern onto the substrate; Applying a photoresist on the conductive pattern; Step of pre-heating the photoresist; Exposing the photoresist so that the remaining portion after the developing; Step of developing the exposed photoresist to form a photoresist pattern; After heat treating the photoresist pattern; And the remaining photoresist is to provide a semiconductor device manufacturing method comprising the step of conducting the process as a target disk compartment is removed 1500 to 2000. ; In addition, the present invention is the one to select the sample wafer, forming a photoresist pattern using the method; SEM (Scanning Electron Microscopy) the overlay inspection of the photoresist pattern over the up to determining defects; Forming a photoresist pattern using the method described above for the main wafer as the defect determination result in good; And by measuring the critical dimension for said main wafer taken by SEM provides a semiconductor device manufacturing method comprising the step of determining a defect.