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METHOD FOR SURFACE-TREATING BORON-DOPED DIAMOND ELECTRODE

机译:表面处理掺硼金刚石电极的方法

摘要

A boron-doped diamond electrode capable of electrochemically detecting various saccharins without using enzymes by performing surface treatment through a simple process, and a method for manufacturing the same are provided. A method for surface-treating a boron-doped diamond electrode comprises: primarily treating a surface of a boron-doped diamond electrode with oxygen plasma; and secondly treating the primarily treated surface of the boron-doped diamond electrode with hydrogen flame. The hydrogen flame treatment process is conducted using a hydrogen torch for 5 to 10 minutes. The boron-doped diamond electrode has hydrogen-containing end groups on the surface thereof as a whole since the boron-doped diamond electrode is manufactured by chemical vapor deposition. The electrode primarily surface-treated with oxygen plasma has oxygen-containing end groups on a surface thereof as a whole. A boron-doped diamond electrode is surface-treated by the method such that hydrogen-containing end groups and oxygen-containing end groups coexist on the surface thereof, wherein the hydrogen-containing end groups exist at a ratio of 10 to 30% of the entire surface of the boron-doped diamond electrode.
机译:本发明提供了一种硼掺杂的金刚石电极及其制造方法,该硼掺杂的金刚石电极能够通过进行简单的表面处理而无需使用酶就能够电化学地检测各种糖精。一种硼掺杂金刚石电极的表面处理方法,包括:用氧等离子体对硼掺杂金刚石电极的表面进行初步处理;然后用氢火焰处理掺硼金刚石电极的经初步处理的表面。氢火焰处理过程使用氢炬进行5至10分钟。由于掺硼金刚石电极是通过化学气相沉积制造的,因此掺硼金刚石电极整体上在其表面上具有含氢的端基。用氧等离子体进行了表面处理的电极整体上具有含氧端基。通过该方法对掺杂硼的金刚石电极进行表面处理,使得含氢端基和含氧端基共存于其表面,其中所述含氢端基的存在比例为所述含氢端基的10-30%。掺硼金刚石电极的整个表面。

著录项

  • 公开/公告号KR100711009B1

    专利类型

  • 公开/公告日2007-04-24

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20050062115

  • 发明设计人 박수문;이주욱;

    申请日2005-07-11

  • 分类号C25B11/12;

  • 国家 KR

  • 入库时间 2022-08-21 20:32:22

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