SYNTHESIS OF NANO FTO(FLUORINE DOPED SNO2)POWDER FOR SEMICONDUCTOR TYPE HYDROGEN SENSOR AND CONDUCTIVE FILM

摘要

The present invention relates to a method for manufacturing ultrafine FTO powder, which is a sensing material and a conductive film material of a semiconductor gas sensor for detecting hydrogen, and its object is to be used in a hydrogen sensor because of its high sensitivity and selectivity for hydrogen in semiconductor gas sensors. It is possible to provide a method for producing ultra-fine FTO powder, which can be used as a raw material of a conductive transparent film because of its good electrical conductivity and good thermochemical stability, at a simpler and lower cost.;According to an aspect of the present invention, there is provided a method for preparing FTO powder, comprising: mixing a starting material, SnCl ₄ , an aqueous HF solution, and acetylene black; Adding ammonia aqueous solution to the mixed starting material aqueous solution while stirring to form a gel; Drying the resulting gel in an oven at 100-130 ° C. for 12-24 hours to dry to obtain a black powder; And it characterized in that the ultra-fine FTO powder of 1 ~ 40nm including the step of heat-treating the dried black powder at 600 ~ 800 ℃ 6-12 hours.; Fluorine doped SnO2 (FTO), hydrogen sensor, acetylene black, HF