OXIDE APERTURE LONG-WAVELENGTH VERTICAL CAVITY SURFACE EMITTING LASERS AND METHOD OF MANUFACTURING THE SAME

摘要

A long-wavelength vertical cavity surface emitting laser with an oxide aperture and a method of manufacturing the same are provided to control thickness of a current blocking layer by depending on epitaxial growth through low temperature re-growth as minimizing lattice defect. A semiconductor bottom mirror layer(2), a first semiconductor electrode layer(3), a gain active layer(4) and a semiconductor positive electrode layer(5) are grown on a compound semiconductor substrate(1) sequentially. A re-growth pattern with 10-100 micrometers width(L1) is formed on the semiconductor positive electrode layer through etching. A first low-temperature grown positive semiconductor buffer layer, a positive semiconductor layer for forming a second low-temperature grown oxide film, a positive semiconductor layer for tunnel junction, a negative semiconductor layer(7) for tunnel junction and a second semiconductor electrode layer(8) for electron injection are formed on the pattern. A top mirror layer is formed on the second semiconductor electrode layer.