A mask is provided to obtain an exact pattern by overcoming asymmetric characteristics in the profile of optical intensity between metal line patterns using a ghost pattern with a width smaller than that of a large space pattern. A mask(100) includes a plurality of metal line patterns(120), a plurality of large space patterns, a plurality of small space patterns, and a ghost pattern. The plurality of large space patterns(160) are arranged within a large space between the metal line patterns. The plurality of small space patterns(140) are arranged within a small space between the metal line patterns. The ghost pattern(150) is formed at a center portion of the large space pattern. The width of the ghost pattern is smaller than that of the large space pattern.
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