FERROELECTRIC FILM, SEMICONDUCTOR DEVICE, FERROELECTRIC FILM MANUFACTURING METHOD, AND FERROELECTRIC FILM MANUFACTURING APPARATUS

摘要

PPROBLEM TO BE SOLVED: To increase the coercive electric field while lowering the dielectric constant of a dielectric film having a composition represented by SrSB2/SB(TaSB1-x/SBNbSBx/SB)OSB7/SB(0≤x≤1). PSOLUTION: A protective member 35 of the same material as that of a target 15 is fixed to the periphery of the target 15 on the inner surface of the processing chamber S in a sputtering system 1. A wafer W on which a lower conductor film of a metal oxide is formed is sputtered in the sputtering system 1 to form a ferroelectric film on the lower conductor film. The wafer W on which the ferroelectric film is formed is then heated by an annealer and the ferroelectric film is oxidized. Consequently, a conventionally unrealizable ferroelectric film having a dielectric constant of 35 and a coercive electric field exceeding 50 kV/cm can be formed. PCOPYRIGHT: (C)2004,JPO&NCIPI