TAILORING OF A WETTING/BARRIER LAYER TO REDUCE ELECTROMIGRATION IN AN ALUMINUM INTERCONNECT

摘要

We have discovered particular wetting layer or wetting/barrier layer structures which enable depositing of overlying aluminum interconnect layers having 111 texturing sufficient to provide a Rocking Curve FWHM angle &thgr; of about 1° or less. The aluminum interconnect layer exhibiting a Rocking Curve FWHM angle &thgr; of about 1° or less exhibits excellent electromigration properties. In addition when the aluminum layer is subsequently pattern etched, the sidewalls of the etched aluminum pattern exhibit a surprising reduction in pitting compared with pattern etched aluminum layers exhibiting higher Rocking Curve FWHM angles.