METHOD OF GROWING INGAN AND MOCVD APPARATUS FOR GROWING INGAN

摘要

A method for growing InGaN and an MOCVD apparatus for growth of InGaN are provided to increase In composition in an InGaN layer and the uniformity of the InGaN layer in a substrate. A substrate is loaded on a suceptor in a reaction chamber for MOCVD. A reaction gas is introduced into the reaction chamber while heating the substrate, to grow an InGaN layer on the substrate. A temperature of the substrate is periodically changed with lapse of time, during growth of the InGaN layer. In the step of growing the InGaN layer, the substrate is heated by a first temperature and a second temperature which are alternatively repeated.