Semiconductor component with retrograde doping profile in a channel region and a method for producing the same

摘要

A process for producing a retrograde doping profile in a channel region (336, 346) of a field effect transistor (330, 340), said method comprising:Forming a potential well structure (310, 320) in a substrate;epitaxially growing a channel layer (350) on the potential well structure (310, 320), wherein a doping concentration in the channel layer (350) is less than a doping concentration in the potential well structure (310, 320) is;Adjustment of the retrograde doping profile in the channel layer (350) by controlling the process parameters during the epitaxial growth of the channel layer (350) and / or by controlling the process parameters during the implantation of ions and / or by providing a barrier diffusion layer (351);Forming a gate insulation film (335) and a gate electrode (334, 344) on the channel layer (350); andForming a drain - and a source region (331, 341) in the potential well structure (310, 320), wherein the channel region (336, 346) between the drain region (331, 341) and the source region (331, 341) is arranged.