Self-aligning method for producing a ridge waveguide semiconductor laser

摘要

A dielectric layer formed on an ohmic contact layer (306a) on a semiconductor substrate (300) is patterned by etching. A pair of dielectric layers are formed on the patterned dielectric layer. The dielectric layers are planarized and etched to expose the ohmic contact layer. A pair of metal layers are formed respectively on the exposed ohmic contact layer and reverse side of the substrate.