Lateral schottky - diode and method for their preparation

摘要

Lateral semiconductor diode comprising:– a semiconductor body (1, 2) from a semiconductor substrate (1) and a is applied on top of the epitaxial layer (2), the p - or n - is doped to a major surface (5) forms,– a first contact device (6), which are located in from one side of the semiconductor body (1, 2) extending from and below the main surface (5) extending first trenches (3) in the epitaxial layer (2) is located and a schottky - contact to the semiconductor body (1,2), and– a second contact device (7), which are located in of a different side of the semiconductor body (1, 2) extending from and below the first main surface (5) extending second trenches (4) is located in the epitaxial layer and an ohmic contact with the semiconductor body (1, 2):– the first and the second trenches (3, 4) substantially in a finger-like manner and at a distance from each other engage in one another and– thus be between the two contact devices, only a through the schottky - contact..