A method for designing a monolithically integrated, mode-coupled semiconductor lasers - pulse source

摘要

A method for designing a monolithically integrated, mode-coupled semiconductor lasers - pulse source with one of a number n_W Quantum well layers constructed active waveguide with a saturable absorption section and an amplifier section into linear array in an active region,characterized in thatfor minimizing the number n of the amplitude noise_W Quantum well layers of the numbers n_ws and n_wv from two optimization criteria for the behavior of the semiconductors - laser pulse source (hl - pq), which in a passive region (pb) at least one grid section (gs), taking into account the influence of thickness of the optimization criteria on the behavior of the semiconductors - laser pulse source is selected with aI. optimization criterion: determination of the number n_Ws Quantum well layers (qws) with the request for a minimization of the saturation behavior by maximizing the saturation energy (e_sat) the amplifier section (vs) (Max (esat) ⇔ Min (γw·nws))by means of a minimization of the product of γ_w and n_ws according to withΓ_w = an optical confinement - factor for the optical field distribution in the active waveguides of the structure with n_w Quantum well layers,G ′ = modal differential amplification coefficient dg / dn with n..