首页> 外国专利> Monolithically integrated, mode-coupled semiconductor laser pulse source designing method for e.g. measuring device, involves determining quantum layers with request of minimization of saturation performance by maximization of saturation

Monolithically integrated, mode-coupled semiconductor laser pulse source designing method for e.g. measuring device, involves determining quantum layers with request of minimization of saturation performance by maximization of saturation

机译:单片集成,模式耦合的半导体激光脉冲源设计方法,例如测量设备,涉及确定量子层,要求通过最大化饱和度来最小化饱和性能

摘要

The method involves selecting quantum well layers from two optimization criteria for the performance of semiconductor laser pulse source under the consideration of the influence strength of the optimization criteria on the performance of the laser pulse source. The well layers are determined with the request of a minimization of the saturation performance by a maximization of the saturation energy of an amplifier section.
机译:该方法涉及在考虑最优化标准对激光脉冲源性能的影响强度的情况下,从两个最优化标准中选择量子阱层,以用于半导体激光脉冲源的性能。通过使放大器部分的饱和能量最大化来使饱和性能最小化,从而确定阱层。

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