Method for production of communicating hollow spaces, involves providing silicon substrate in which first mask and second mask are brought whereby two differently porous layers in silicon substrate are produced by electrochemical corroding

摘要

Method involves providing silicon substrate in which first mask and second mask are brought. Two differently porous layers in the silicon substrate are produced by electrochemical corroding. The highly porous silicon layer relocates itself forming first hollow space covered by epitaxial film. A third mask is applied on the epitaxial film. The epitaxial film is structured by corroding so a second hollow space is created. The second cavity is covered by applying a further layer on the epitaxial film which can be taken off.