Method for preventing the formation of amines and similar organic compounds on insulator surfaces of nitrogen-insulated switching devices comprises providing the surfaces of the insulator parts with thin layers of inert inorganic materials

摘要

Method for preventing the formation of amines and similar organic compounds on insulator surfaces of nitrogen-insulated switching devices comprises providing the surfaces of the insulator parts with thin layers of inert inorganic materials. An independent claim is also included for a nitrogen-insulated switching device with a housing having an outer coating of insert inorganic material.