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Determining dopant content of doped amorphous semiconductor layer on carrier comprises use of spectral ellipsometry and reference Tauc curve
Determining dopant content of doped amorphous semiconductor layer on carrier comprises use of spectral ellipsometry and reference Tauc curve
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机译:确定载流子上掺杂的非晶半导体层的掺杂剂含量包括使用光谱椭圆仪和参考Tauc曲线
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摘要
Determining the dopant content of a doped amorphous semiconductor layer (10) on a carrier (1) comprises preparing a reference Tauc curve relating dopant concentration to the slope (b) of the linear region. The square root of the product of absorption coefficient (alpha ) and photon energy (E) (y axis) is plotted against photon energy and the slope (b) equals delta y/delta (E -Et) where Et is the band gap. The plot is repeated for the dopant layer to be tested using spectral ellipsometry, the slope (b) is found and thus the dopant concentration.
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